RF-Produkte
Twin Transistoren
Renesas
|
Artikel |
Applikation |
Spannung (V) |
Strom (mA) |
Frequenz (MHz) |
Leistungsparameter |
PKG |
|---|---|---|---|---|---|---|
|
uPA800T |
General Purpose, Twin Tr. |
1 |
3 |
2000 |
NF=1.9dB |
6SMM |
|
uPA801T |
General Purpose, Twin Tr. |
3 |
7 |
1000 |
NF=1.2dB |
6SMM |
|
uPA802T |
General Purpose, Twin Tr. |
3 |
7 |
1000 |
NF=1.4dB |
6SMM |
|
uPA804T |
General Purpose, Twin Tr. |
5 |
5 |
1000 |
|S21e|2=5.0dB(MIN.) |
6SMM |
|
uPA806T |
General Purpose, Twin Tr. |
3 |
3 |
2000 |
NF=1.5dB |
6SMM |
|
uPA807T |
General Purpose, Twin Tr. |
2 |
3 |
2000 |
NF=1.5dB |
6SMM |
|
uPA808T |
General Purpose, Twin Tr. |
2 |
3 |
2000 |
NF=1.3dB |
6SMM |
|
uPA810T |
General Purpose, Twin Tr. |
3 |
7 |
1000 |
NF=1.2dB |
6SMM |
|
uPA811T |
General Purpose, Twin Tr. |
3 |
5 |
2000 |
NF=1.9dB |
6SMM |
|
uPA812T |
General Purpose, Twin Tr. |
3 |
7 |
1000 |
NF=1.4dB |
6SMM |
|
uPA813T |
General Purpose, Twin Tr. |
5 |
5 |
1000 |
|S21e|2=5.0dB(MIN.) |
6SMM |
|
uPA828TD |
Mobile Comm., VCO, Twin Tr. |
1 |
3 |
2000 |
NF=1.3dB |
6L2MM (1208) |
|
uPA831TD |
Mobile Comm., VCO, Twin Tr. |
Q1:3, Q2:3 |
Q1:7, Q2:7 |
Q1:1000, Q2:1000 |
Q1:NF=1.2dB, Q2:NF=1.4dB |
6L2MM (1208) |
|
uPA860TD |
Mobile Communication VCO, Twin Transistor |
Q1:3, Q2:1 |
Q1:3, Q2:5 |
Q1:2000, Q2:2000 |
Q1:NF=1.5dB, Q2:NF=1.4dB |
6L2MM (1208) |
|
uPA861TD |
Mobile Communication VCO, Twin Transistor |
Q1:1, Q2:1 |
Q1:3, Q2:5 |
Q1:2000, Q2:2000 |
Q1:NF=1.5dB, Q2:NF=1.4dB |
6L2MM (1208) |
|
uPA862TD |
Mobile Communication VCO, Twin Transistor |
Q1:3, Q2:1 |
Q1:3, Q2:10 |
Q1:2000, Q2:2000 |
Q1:NF=1.5dB, Q2:NF=1.9dB |
6L2MM (1208) |
|
uPA863TD |
Mobile Communication VCO, Twin Transistor |
Q1:1, Q2:1 |
Q1:3, Q2:10 |
Q1:2000, Q2:2000 |
Q1:NF=1.3dB, Q2:NF=1.9dB |
6L2MM (1208) |
|
uPA869TD |
Mobile Comm., VCO, Twin Tr. |
Q1:1, Q2:1 |
Q1:3, Q2:10 |
2000 |
Q1:NF=0.8dB, Q2:NF=1.9dB |
6L2MM (1208) |
|
uPA873TD |
Mobile Communication VCO, Twin Transistor |
1 |
10 |
2000 |
NF=1.9dB |
6L2MM (1208) |
|
uPA895TD |
Mobile Communication VCO, Twin Transistor |
1 |
5 |
2000 |
NF=1.9dB |
6L2MM (1208) |
Power Transistor / FET
Renesas
|
Artikel |
Applikation |
Spannung (V) |
Strom (mA) |
Frequenz (MHz) |
Leistungsparameter |
PKG |
|---|---|---|---|---|---|---|
|
NE5500134 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
4.8 |
IDset=200 |
450-2500 |
Pout=29.5dBm, GL=13.0dB, Efficiency=55%@f=1.9GHz |
3PMM |
|
NE5500179 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
4.8 |
340 |
450-2500 |
Pout=30.0dBm, GL=14.0dB, Efficiency=55%@f=1.9GHz |
79A |
|
NE5500234 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
6 |
610 |
450-2500 |
Pout=32.5dBm, GL=11.0dB, Efficiency=50%@f=1.9GHz |
3PMM |
|
NE5500434 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
4.8 |
IDset=600 |
450-2500 |
Pout=35.0dBm, GL=14.0dB, Efficiency=60%@f=900MHz |
3PMM |
|
NE5500479 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
3.5 |
600 |
450-2500 |
Pout=31.5dBm, GL=15.0dB, Efficiency=62%@f=900MHz |
79A |
|
NE5510279 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
4.8 |
1000 |
450-2500 |
Pout=35.5dBm, GL=16.0dB, Efficiency=65%@f=900MHz |
79A |
|
NE5511279 |
General Purpose, Medium Power Bip. Tr. |
7.5 |
IDset=400 |
460-900 |
Pout=40.5dBm, GL=18.5dB, Efficiency=50%@f=460MHz |
79A |
|
NE5520279 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
3.2 |
800 |
450-2500 |
Pout=32.0dBm, GL=10dB, Efficiency=45%@f=1.8GHz |
79A |
|
NE5520379 |
Mobile Comm., PDC, GSM, Power Amp., Power MOS FET |
3.2 |
1000 |
450-2500 |
Pout=35.5dBm, GL=16dB, Efficiency=68%@f=915MHz |
79A |
|
NE552R479 |
L, S-Band Power Amp., Power MOS FET |
3.0 |
230 |
2450 |
Pout=26.0dBm, GL=11dB, Efficiency=45%@f=2.45GHz |
79A |
|
NE552R679 |
UHF-Band Power Amp., Power MOS FET |
3.0 |
320 |
460 |
Pout=28.0dBm, GL=20dB, Efficiency=60%@f=460MHz |
79A |
|
NE5530179 |
UHF-Band Power Amp., Power LDMOS FET |
7.5 |
IDset=200 |
460 |
Pout=40.0dBm (TYP.)@Vds=7.5V, f=460MHz, Pin=25dBm |
79A |
|
NE55410GR |
UHF-Band Power Amp., Power LDMOS FET |
28 |
IDset=120 |
960 |
Po(1dB)=41.5dBm@f=960MHz, Vds=28V, GL=30dB@f=900MHz |
16HTSSOP |
|
NE6500179 |
L, S-Band Power Amp., Power GaAs FET |
6 |
200 |
800-2500 |
Po(1dB)=30dBm, GL=12dB, Efficiency=50%@f=1.9GHz |
79A |
|
NE650103M |
L, S-Band Power Amp., Power GaAs FET |
10 |
IDset=1500 |
800-2500 |
Po(1dB)=40dBm, GL=11dB, Efficiency=45%@f=2.3GHz |
3M(T-91M) |
|
NE6510179 |
L-Band Power Amp., Power GaAs HJ-FET |
3.5 |
200 |
800-2500 |
Po=32.5dBm, GL=10dB, Efficiency=58%@f=1.9GHz |
79A |
|
NE651R479 |
L-Band Power Amp., Power GaAs HJ-FET |
3.5 |
50 |
800-2500 |
Po=27dBm, GL=12dB, Efficiency=60%@f=1.9GHz |
79A |
|
NE664M04 |
Bluetooth(TM), Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. |
3.6 |
Icq=4 |
1800 |
P-1=26dBm |
F4TSMM |
|
NE67718 |
Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. |
2.8 |
Icq=8 |
1800 |
P-1=15dBm |
4SMM |
|
NE677M04 |
Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. |
2.8 |
Icq=8 |
1800 |
P-1=15dBm |
F4TSMM |
|
NE67818 |
Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. |
2.8 |
Icq=10 |
1800 |
P-1=18dBm |
4SMM |
|
NE678M04 |
Wireless Comm. PA, (0.9-2.4GHz), Power Amp., Medium Power Bip. Tr. |
2.8 |
Icq=10 |
1800 |
P-1=18dBm |
F4TSMM |
|
NE68939 |
General Purpose, Medium Power Bip. Tr. |
3.6 |
Icq=1 |
1900 |
Pin(1dB)=24dBm (class AB) |
4MM |
|
NE69039 |
General Purpose, Medium Power Bip. Tr. |
3.6 |
Icq=1 |
1900 |
Pin(1dB)=27dBm (class AB) |
4MM |
|
NEM090303M-28 |
UHF-Band Power Amp., Power LDMOS FET |
28 |
IDset=250 |
960 |
Pout=46.5dBm, GL=20dB, Efficiency=62%@f=960MHz |
3M(T-91M) |
|
NEM090603M-28 |
UHF-Band Power Amp., Power LDMOS FET |
28 |
IDset=550 |
960 |
Po(1dB)=48.5dBm, GL=17.5dB, Efficiency=54%@f=960MHz |
3M(T-91M) |
|
NEM090853P-28 |
UHF-Band Power Amp., Power LDMOS FET |
28 |
IDset=800 |
960 |
P-1=50dBm, GL=19dB, Efficiency=54%@f=960MHz |
3P(T-97M) |
|
NEM091203P-28 |
UHF-Band Power Amp., Power LDMOS FET |
28 |
IDset=1200 |
960 |
Pout=51.3dBm, GL=18dB, Efficiency=58%@f=960MHz |
3P(T-97M) |
|
NEM091803S-28 |
UHF-Band Power Amp., Power LDMOS FET |
28 |
IDset=1600 |
880 |
Pout=52.5dBm, GL=18.5dB, Efficiency=53%@f=880MHz |
T-101M (3S) |
|
NES1823M-180 |
L, S-Band Power Amp., Power GaAs FET |
12 |
IDset=2000 |
1800-2300 |
Pout=52.5dBm, GL=12.5dB, Efficiency=48%@f=2.17GHz |
T-92M |
|
NES1823M-240 |
L, S-Band Power Amp., Power GaAs FET |
12 |
IDset=2000 |
1800-2300 |
Pout=53.4dBm, GL=12dB, Efficiency=45%@f=2.17GHz |
T-92M |
|
NES1823M-45 |
L, S-Band Power Amp., Power GaAs FET |
12 |
IDset=4000 |
1800-2300 |
Pout=46.5dBm, GL=12dB, Efficiency=40%@f=2.2GHz |
T-86M |
|
NES1823S-45 |
L, S-Band Power Amp., Power LDMOS FET |
12 |
IDset=1000 |
2170 |
Pout=46.5dBm, GL=13.5dB, Efficiency=53%@f=2170MHz |
T-142M |
|
NES1823S-90 |
L, S-Band Power Amp., Power GaAs FET |
12 |
1500 |
2170 |
Pout=49.5dBm, Efficiency=50% |
T-142M |
|
NESG2101M05 |
W-CDMA, 2.4GHz Wireless LAN, SiGeHBT |
3.6 |
Ic(set)=10 |
2000 |
Po(1dB)=21dBm |
F4TSMM |
|
NESG2101M16 |
W-CDMA, 2.4GHz Wireless LAN, SiGeHBT |
3.6 |
Ic(set)=10 |
2000 |
Po(1dB)=21dBm |
6L2MM (1208) |
|
NESG250134 |
VHF-Band Power Bip. Tr., FRS, Mobile Comm., SiGeHBT |
3.6 |
Ic(set)=30 |
460 |
Po(1dB)=+29dBm@f=460MHz, Vce=3.6V, GL=19dB@f=460MHz |
3PMM |
|
NESG260234 |
UHF-Band Medium Power Bip. Tr., FRS, GMRS, Mobile Comm., SiGeHBT |
6 |
Ic(set)=30 |
460 |
Po(1dB)=+30dBm@f=460MHz, Vce=6V, GL=22dB@f=460MHz |
3MM |
|
NESG270034 |
UHF-Band Medium Power Bip. Tr., FRS, GMRS, Mobile Comm., SiGeHBT |
6 |
Ic(set)=30 |
460 |
Po=33.5dBm, Vce=6V, GL=19.5dB@f=460MHz |
3PMM |
