This technology is deducing the advantages of SRAM & DRAM cells. It is based on a 6 transistor SRAM cell using TFT combined with a DRAM capacitor. It is a compatible device to the std LP SRAM & should not confound with Pseudo SRAM which is based on a DRAM Cell. Features of the super SRAM are: - Combination of LP SRAM & DRAM benefits - High density: twice the memory capacity - Soft Error rate reduced to almost DRAM level - Compatible with LPSRAM - No hidden refresh Þ no access delay occurs - Stand-by current is almost on LPSRAM level

16Mb density:

R1LV1616RSA (1Mx16/2Mx8, 2,7V - 3,6V, TSOP I package, 55ns - 85ns)
R1LV1616RBG (1Mx16/2Mx8, 2,7V - 3,6V, CSP package, 55ns - 85ns)
R1LV1616RSD (1Mx16/2Mx8, 2,7V - 3,6V, µTSOP package, 55ns - 85ns)

32Mb density:

R1WV3216RBG (2Mx16/4Mx8, 2,7V - 3,3V, CSP package, 70ns - 85ns)
R1WV3216RSD (2Mx16/4Mx8, 2,7V - 3,3V, µTSOP package, 70ns - 85ns)

All products are available at industrial temperature range (-40°C to +85°C) These a.m devices are dedicated for industrial use (e.g. POS, Industry Control Units etc.).

For further information don't hesitate to contact your MSC- Sales Office.