Stuttgart, Germany - Gleichmann Electronics expands its product portfolio of low-voltage power management devices with 24 new extremely robust power MOSFETs from NEC Electronics.

The new devices, which are part of the NP series, feature 40-volt (V) and 55V VDSS (voltage drain source short) ratings, two ID (drain current) (DC) ratings of 90 and 100 amperes and logic-/non-logic-type gate drives.

The improved ruggedness is achieved by the recently developed UMOS-2R process, an enhancement of NEC Electronics' UMOS-2 trench process with a 0.5-micron design rule.

This process results in a maximum repetitive avalanche energy rating of 1000 megajoules (mJ) and supports a maximum channel temperature of 200 degrees Celsius.

The new family of rugged power MOSFETs is available in TO-220, TO-262 and TO-263ZP packages and is fully AEC-Q101 qualified and RoHS compliant.

Typical application areas for these rugged power MOSFETs include engine cooling fans, HVAC blower motor drives and electric power steering systems. All devices are in production and available now from Gleichmann Electronics.