IXYS Corporation introduces the XPT IGBT, IXYS’ latest generation of short-circuit rated high voltage IGBTs with fast switching and low conduction losses. This IGBT family was developed in IXYS’ internal fabs using advanced processing and design technologies. These XPT IGBTs are designed for parallel operation, thereby enabling high power module design and scaling up the power capability with the use of multidiscrete devices. These devices are optimized for use in a variety of power control applications including motor drive, UPS, power supplies, inverters and solar power inverters.

The benefits of merging the IXYS cell design with XPT (Xtreme light Punch Through) wafer technology result in competitive static and dynamic behavior as well as the rugged and reliable operation during power turn-off testing. The XPT IGBT has a low Vce(sat) (typical 1.8V at 25 degrees C). Combining the XPT IGBT with the recently introduced IXYS SONIC diode delivers fast and soft switching behavior and gives excellent EMI performance regardless of the level of the switched current.

The introduced 1200V XPT IGBTs are rated at 10A, 15A, 35A and 50A. These IGBTs will be available in standard module and discrete packages as well as being available to be packaged in customer specific designs. The XPT IGBT/Sonic combination range is available in Converter Brake Inverter module (CBI) and six-pack topologies in 3 different package sizes. A diode bridge input rectifier with break chopper supplements the 3- phase inverter six-pack stage in the CBI configuration. The IXA37IF1200HJ is an example of a discrete co-pack containing the XPT IGBT and the Sonic diode integrated in the ISOPLUS 247TM package.

This Sonic-FRD™ diode is ideally suited for power applications with high switching frequencies (20-200 kHz), and especially in boost and free wheeling configurations, such as in Power Factor Correction (PFC) circuits and Switch Mode Power Supplies (SMPS).

All of these will benefit from the optimised characteristics of small reverse recovery current (I_RR) and charge (Q_RR) as well as a soft recovery. The results are reduced losses for the diode as well as for the switching transistor, minimized EMI noise and less efforts and costs for an additional snubber circuitry.

The Sonic-FRD™ family have a V_RRM rating from 600 V to 1800 V with different current values from 5 up to 60 Amps. More than 25 products in various configurations and packages including the recommended ISOPLUS-technology of IXYS are available; following a small election:
DHG5I600PA
DHG30I600PA
DHG10I1200PM
DHG40C1200HB
DH60-18A
DH2x61-18A.
The use of Sonic-FRD™ rectifiers provide the most efficient and highest power density at lower costs.
With the expansion of the Sonic-FRD™, IXYS takes another step to supply customers with a wide range of solutions for fast recovery diodes used in power applications.

IXYS announces the expansion of its super junction CoolMOS™ CP series. The new MOSFETs are integrated in the IXYS ISOLPLUS™ gives the designer a standard discrete housing with ceramic, Direct Copper Bonded (DCB) isolation. This isolation has a low thermal impedance and a higher reliability in power cycling than standard copper based non isolated products.

The IXKC15N60C5 (600V, 0.165Ω), IXKC19N60C5 (600V, 0.125Ω) and the IXKC23N60C5 (600V, 0.1Ω) in the ISOPLUS220™ and the IXKR47N60C5 (600V, 0.045Ω) in the ISOPLUS247™ are just a few examples of low R_DS(on)

MOSFETs in isolated packages. Even a dual CoolMOS™ ® LKK47- 06C5 (600V, 2 x 0.045Ω) ISOPLUS264™ package is available. FDM15-06KC5 and FMD15- 06KC5 in ISOPLUS i4-PAC™ are examples for Buck and Boost configurations with ultra fast HiPerDynFRED™ diodes (300V series connected diodes) demonstrating the power of multi chip packaging in moulded housings.

The combination with the CoolMOS™ ® CP MOSFET series and the ISOLPLUS™ packaging is creating a high power density and reliable design which helps to reduce total system cost.

The extension of IXYS SMD port folio with the standard packages SMA and SMB

The first product family for this housing segment are Schottky diodes with a VRRM rating from 40 up to 100 V. Rectifiers with Schottky barriers are ideally suited for power applications with high switching frequencies and the need of low losses. Combined with the advantages of the small standardized cases SMA and SMB the user is able to achieve a compact design on the board and very good performance for the power circuit.

Typical applications are switch mode power supplies, converters, free wheeling diodes, polarity protection or ‘ORing’-circuits for multiple supply voltages.

Schottky rectifiers are available with different designs supporting a variety of applications.

Adapted characteristics like a very low forward voltage drop, a small reverse current and an excellent dynamic behaviour make Schottky diodes indispensable in modern circuit designs

First products are six types in SMA and SMB with a VRRM of 40, 60 and 100 V:
DSB1I40SA
DSB1I60SA
DSA1I100SA
DSB2I40SB
DSB2I60SB
DSA2I100SB

With the introduction of these SMD packages IXYS makes a further step to supply customers with a huge range of solutions for power semiconductors from mW to MW at one service.

Strong Adoption In Consumer/Medical Industries

IXYS used a family of proprietary diodes, the DFP32-005 device family, optimized for solar cell panels and space-sensitive applications, where the devices can withstand radiation levels found in space.

These family of devices are a result of IXYS focused R&D in developing power semiconductors for the growing business of solar photovoltaic panels, that are used to generate electrical power, in standard systems, and in concentrated solar cell application both, in terrestrial and outer space installations.

The diodes feature low forward voltage drop (Vf) and typical low leakage current of only 0.01nA,

thereby preventing energy stored in the batteries from leaking back out of the solar panel when in the dark. Due to their ruggedness these diodes have been designed in integrated solar panels on spacecraft, and terrestial installations. Today’s space applications are exposed to extreme outer space radiation, variant temperatures, humidity and light; IXYS’ DFP32 device perform optimally in these tough conditions. through the use of a silicon starting material and special passivation layers.

Advanced Silicon power technology adoption in the alternative energy generation area has been a focus for IXYS. These diodes complement our power MOSFETS, IGBT’s and power modules that are used in the

inverters for solar panels, and converters for wind generators,“ commented Dr. Nathan Zommer, CEO of IXYS Corporation. „We have been working with our customers to develop new specialized products for the solar cells applications to meet their nonstandard demands, and are proud of the fact that the resulting specialized products are deployed“

Six-pack of TrenchMV™ MOSFETs

IXYS announces the release of a new family of 55V to 100V TrenchMV Power MOSFETs, which are integrated as a six-pack configuration in one ceramic isolated surface mountable module (ISOPLUS-DIL). This combination of efficient Power MOSFETs with the ISOPLUS-DIL packaging technology

continues IXYS’ leadership position in the high power, low voltage power conversion market.

Improvements in the fundamental trench cell design continue to bring many technical advantages to the TrenchMV™ Power MOSFET family.

 Lower R_DS(on) and gate charge, increased ruggedness and faster switching speeds allow for more power efficient devices. The Direct Copper Bonded (DCB) ceramic isolation in combination with the insert-molding technology creates a reliable module with an extreme high power density.

IXYS provides the surface mountable module in the voltage range from 55 to 100V, while currents range from 40 to 160A. The GWM160- 0055X1-SMD (55V, 160A, R_DS(on) = 0,0027Ohms with isolated R_thjc = 0,9K/W) is just an example of the surface mountable module with TrenchMV™ Power MOSFET with superior electrical and thermal performance. Besides the standard six-pack configuration IXYS offers several different options with respect to the internal module layout and used silicon components inside.

The ISOPLUS-DIL combined with the TrenchMV™ Power MOSFETs find homes in many rugged hard switching applications. These devices are designed to meet the most robust conditions commonly required by the automotive or electricvehicle sector.

The ISOPLUS-DIL can be surface mounted with a standard pick and place machine and is suitable for re-flow processes. The automation level of the end-product production can be maintained and having the benefits of ceramic module isolation.

The ISOPLUS-DIL is a very compact and reliable solution for automotive applications, which contains the latest technology TrenchMV™ Power MOSFETs. With the electrical and mechanical properties of the ISOPLUS-DIL, design-in and factorability is improved compared to solutions currently used.

IXYS announced today the release of the new TrenchT2 Power MOSFET family with the voltage ratings of 40V to 75V designed and optimized to meet the high power, thermal and electrical performance of energy and power management systems with low energy losses.

Utilizing IXYS’ advanced trench technology, these rugged devices come with low on state resistances, Rds(on), typically less than 5 mOhms. This technology platform enables IXYS to insert die with increased load currents into smaller packages while enhancing device efficiency and performance. These MOSFETs provide very low conduction and switching losses, which are crucial factors to achieve higher operating efficiencies. They are also rugged in unclamped inductive switching applications and are packaged in low inductance housings to improve device high frequency switching.

TrenchT2 Power MOSFETs are available in several industry standard packages with voltage ratings from 40V to 75V. They will also be offered in IXYS’ ISOPLUS isolated packages that offer superior thermal cycling performance with identical footprints as the standard TO220 or TO247 un-isolated packages.

IXYS TrenchT2 Power MOSFETs provide designers with high current rating solutions for improved efficiency in automotive electronics, electrical vehicles and power management systems. Common applications include battery chargers, synchronous rectification, DC/DC converters, power train management, off-line SMPS and UPS, primary switches for 24V and 48V systems, distributed power architecture, power amplifiers and brushless motor control.

IXYS announces the release of a new family of 100V to 500V PolarPTM PChannel Power MOSFETs. This is a new generation of P-Channel MOSFET that complements the Polar N-Channel family of IXYS power MOSFETs.

These P-Channel MOSFETs are ideal for ‘high side’ switching where a simple drive circuit that is referenced to ground can be used. This is more cost effective than using an NChannel MOSFET.

Furthermore it allows for the design of a complementary power output stage, with a corresponding IXYS NChannel MOSFET, for a power half bridge stage with a simple drive circuit. These high performance PChannel devices are fabricated using IXYS’ Polar technology platform, reducing conduction losses by 30% and gate charge by 40%, thereby improving energy efficiency and power switching performance. The voltage ratings of these new MOSFETs are 100V, 150V, 200V and 500V with current ratings ranging from 10A to 52A.

Initial offerings include part numbers IXTH52P10P, IXTP36P15P, IXTH26P20P, and IXTH10P50 in various industry standard packages such as the TO- 247, TO-3P, TO-220, and TO-263. In addition, versions will be offered in IXYS’ proprietary ISOPLUSTM packages providing UL approved 2500V isolation with superior thermal cycling and thermal performance. Higher current rated parts with additional package options will be forthcoming in the near future. IXYS’ new P-Channel Power MOSFETs excel in a variety of applications, with best-in-class performance and competitive pricing. Common applications include high side switching, power solid state relays, push-pull amplifiers, CMOS high power amplifiers, DC choppers, high current regulators and high side switches in automotive and test equipments.

The superior ruggedness of the PolarPTM Power MOSFETs makes them suitable for motor control and power cut-off switches or power SSRs for energy saving applications.

IXYS announces the release of 1000V to 1200V Polar Standard and HiPerFET™ Power MOSFETs that improve the performance of high voltage power conversion systems. These new Polar Power MOSFETs improve efficiency by significantly reducing typical on-resistance ‘Ron’ by 20% - a result of IXYS proprietary technology which demonstrates continued technology leadership in the high voltage power MOSFET market.

IXYS recognizes that both voltage rating and ‘Ron’ are critical for reliable and efficient power conversion systems. Consequently, IXYS extends its rugged Polar offering with over 70 new Polar Power MOSFETs rated at 1000V, 1100V and 1200V to facilitate optimum part selection.

The HiPerFET family offers the additional benefits of a fast intrinsic body diode for lower trr and Qrr with improved hard-switching efficiency.

All of these Polar Power MOSFETs are offered in standard packages and a variety of IXYS ISOPLUS packages with integral backside case isolation. The IXTA06N120P (1200V, 0.6A, Ron of 32 ohm) and IXFB44N100P (1000V, 44A, Ron of 0.220 ohm) illustrate the range in power handling capabilities of this new product offering.

IXYS Polar Power MOSFETs will be invaluable in a variety of applications with their best-in-class performance and competitive pricing. Common 1000- 1200V applications include AC-DC power supplies, inverters, high voltage lighting, industrial machinery and medical equipment.

These rugged Polar Power MOSFETs are suitable for high frequency switching under challenging operating conditions. IXYS will continue to grow the high voltage product line with an ongoing plan to increase the value offered in the Polar Power MOSFET family.

IXYS announces the release of a new generation of fast 300V Insulated Gate Bipolar Transistors (“IGBTs”) built with the IXYS robust HDMOS IGBT process. These new IGBTs are capable of hard-switching up to 100 kHz, with current ratings of 42A to 120A, the IXGH42N30C3, IXGH60N30C3, IXGH85N30C3, IXGH100N30C3, and IXGH120N30C3. These IGBTs are currently available in the TO-247 discrete package. Additional package offerings will be made available in the future. All the devices may also be co-packed with IXYS’ high performance HiPerFRED™ Fast Diodes. The combination of high switching speeds and low conduction losses gives power designers a new high value option for switching applications at 300V and below.

Historically, for circuits operating up to 300V, the standard discrete selection has been the MOSFET. However, presently, for circuits that are hard-switching up to 100 kHz, the obvious choices are these 300V IGBTs. These devices are optimized for low Vsat, namely lower forward voltage drop, with a higher current density capability than an equivalent MOSFET. Therefore, IXYS’ new 300V IGBTs can operate with better efficiency and with a smaller die size resulting in lower costs when compared to 300V power MOSFETs. These devices are also rugged in unclamped inductive switching applications, i.e., UIS rated, comparable to most rugged power MOSFETs.

 IXYS’ 300V IGBTs offer a costeffective alternative to MOSFETs for applications such as PFC circuits, UPS systems, inverters for solar energy, switch-mode or resonantmode converters and power supplies,pulse generators, PWM light control, PWM heaters, capacitive discharge applications and in various motor control applications.

Diminishing natural resources, demand for cheap energy and environmental directives for energy efficiency represent a significant challenge. IXYS’ power semiconductors and mixed-signal integrated circuits can play a vital role in reducing energy costs and consumption by optimizing the energy efficiency of everyday products. With a customer base of over 2000 telecommunications, transportation, industrial, medical and consumer companies, IXYS is a worldwide provider of power semiconductors.

IXYS continues to invest in new technologies through acquisition and internal R&D aimed at complementing IXYS’ strengths in power, as well as expanding its market opportunity into emerging high growth markets, including energy management and power quality. Both of these markets are gaining more attention due to the increasing use of electricity, and the strategic importance of energy conservation worldwide.