Two different power LDMOS FETs in one package
Dornach (Germany) – The LDMOS FET NE55410GR from NEC Electronics (Distribution: Gleichmann Electronics) combines two field effect transistors with 2 W and 10 W power output on one die, manufactured using NEWMOS technology.

The N-channel power FET, designed as driver device for power amplifiers in the frequency range from 0.1 to 2.6 GHz, features an excellent thermal stability, an extremely wide supply voltage range from 3 V to 32 V and integrated ESD protection.

The linear gain is 13.5 dB typical (2 W) and 11dB typical (10 W). With a voltage of 28 V between drain and source, a frequency of 2 140 MHz and an operating current of 20 mA, the efficiency of the smaller 2 W FET is 52% typical - with the same voltage and frequency and an operating current of 100 mA, the efficiency of the 10 W FET is 46% typical.

Because of its technical characteristics the NE55410GR, which comes in a 16-pin plastic HTSSOP (Pb‑Free), is ideally suited as preamplifier for base stations and UHF-band applications. Data sheet and samples of the power LDMOS FET are immediately available from Gleichmann Electronics.